Mnemonic
EOR |
Description
The contents of the accumulator are exclusive-ORed, bit by bit, with the contents of the addressed core-storage location. The result replaces the contents of the accumulator. Exclusive-ORing occurs only between corresponding bit positions in the accumulator and the core-storage word: bit 0 is exclusive-ORed only with bit 0, bit 1 only with bit 1, and so on. The four possible exclusive-ORing results are:
Bit Values | ||||
---|---|---|---|---|
From Core Storage Word |
From Accumulator |
Result in Accumulator |
||
0 | 0 | 0 | ||
0 | 1 | 1 | ||
1 | 0 | 1 | ||
1 | 1 | 0 |
Contents of the addressed core-storage word are not changed as a result of the operation. An example of exclusive-ORing is:
0000 1111 0000 1111 Word in accumulator EOR 1111 0000 0000 1111 Word from core storage 1111 1111 0000 0000 Result in accumulator
There are no addressing exceptions for the logical exclusive-OR instruction; all forms of address ing that are described under "Effective-Address Generation" apply to the EOR instruction.
Indicators: The carry and overflow indicators are not affected during the EOR operation.
Programming Note: Typical uses for the exclusive OR instruction are shown below.
0000 0000 0000 1111 | Accumulator = 1510 | |
1111 1111 1111 1111 | Storage mask = -110 | |
1111 1111 1111 0000 | EOR result = -1610 | |
-1111 1111 1111 1111 | Subtract storage mask = -(-110) | |
1111 1111 1111 0001 | Accumulator value = -1510 |
LD SWITCH | Accumulator = XXXX XXXX XXXX XXXX | |
EOR MASK | Accumulator = XXXX XXZX XXXX XXXX | |
STO SWITCH | Location switch = XXXX XXZX XXXX XXXX | |
AND MASK | Accumulator = 0000 00Z0 0000 0000 | |
BSC L A, Z | Branch to a specified location (A) if bit 6 was 0 | |
0000 0010 0000 0000 | Mask in storage | |
XXXX XXXX XXXX XXXX | Switch value in storage |
Examples
Logical Exclusive OR
Assembler Language Coding | Hexadecimal Value | Description of Instruction | |||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
Label | Operation | F | T | ||||||||
|
|
32 | 33 | 35..40.. | |||||||
EOR | DISP | F0XX | EOR contents of CSL at EA (I+DISP) with A | ||||||||
EOR | 1 | DISP | F1XX | EOR contents of CSL at EA (XR1+DISP) with A | |||||||
EOR | 2 | DISP | F2XX | EOR contents of CSL at EA (XR2+DISP) with A | |||||||
EOR | 3 | DISP | F3XX | EOR contents of CSL at EA (XR3+DISP) with A | |||||||
EOR | L | ADDR | F400XXXX | EOR contents of CSL at EA (Addr) with A | |||||||
EOR | L | 1 | ADDR | F500XXXX | EOR contents of CSL at EA (Addr+XR1) with A | ||||||
EOR | L | 2 | ADDR | F600XXXX | EOR contents of CSL at EA (Addr+XR2) with A | ||||||
EOR | L | 3 | ADDR | F700XXXX | EOR contents of CSL at EA (Addr+XR3) with A | ||||||
EOR | I | ADDR | F480XXXX | EOR contents of CSL at EA (V in CSL at Addr) with A | |||||||
EOR | I | 1 | ADDR | F580XXXX | EOR contents of CSL at EA (V in CSL at "Addr+XR1") with A | ||||||
EOR | I | 2 | ADDR | F680XXXX | EOR contents of CSL at EA (V in CSL at "Addr+XR2") with A | ||||||
EOR | I | 3 | ADDR | F780XXXX | EOR contents of CSL at EA (V in CSL at "Addr+XR3") with A |
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